EPC·GaN Power Transistor·ActiveNew & Original

| Order quantity | Unit price | Terms |
|---|---|---|
| 1-9 | US$5.0104 | EXW |
| 10-29 | US$4.2929 | EXW |
| 30-99 | US$3.8657 | EXW |
| 100-499 | US$3.434 | EXW |
| 500-999 | US$3.2358 | EXW |
| 1000+ | US$3.1467 | EXW |
Prices are indicative starting points — send your BOM and target quantity for an exact quotation. · FOB / DDP on request
| Manufacturer | EPC |
| Manufacturer part number | EPC2204 |
| Category | GaN Power Transistor |
| Description | EPC eGaN FET rated 100 V and 29 A with 4.4 mOhm typical on-resistance and 5.7 nC gate charge in a 2.5 x 1.5 mm chip-scale package, used for high-density DC-DC, LiDAR drive and 48 V-to-load conversion where switching loss dominates. |
| Package / case | Chip-scale LGA (2.5 x 1.5 mm) |
| Mounting type | SMD |
| Condition | New & Original |
| Datasheet | https://epc-co.com/epc/Portals/0/epc/documents/datasheets/EPC2204_datasheet.pdf |
| Vds | 100 V |
| Id | 29 A |
| Rds(on) | 4.4 mOhm |
| Qg | 5.7 nC |
| Coss | 304 pF |
| Package | LGA 2.5x1.5 |
| Stock | Sourced to order |
| Minimum order (MOQ) | 1 pc |
| Lead time | Lead time on request |
| Unit price | 1-9: US$5.0104 · 10-29: US$4.2929 · 30-99: US$3.8657 · 100-499: US$3.434 · 500-999: US$3.2358 · 1000+: US$3.1467 |
| Packaging | Tape & reel |
| Notes | C3034739; zero reverse recovery charge; needs a 5 V gate drive and a tight power loop to keep inductance low; LCSC USD ladder, verify at quote |
Reply within 4 working hours. Volume pricing, samples and packaging are negotiable.
Chat on WhatsApp — instant replySend the part number on WhatsApp and we reply during China business hours.